Работы, цитирующие эту работу

Работ: 3

Работа: Thermal stress analysis of crystal growth in a horizontal Bridgman furnace

1. Features of Growing a Solid Solution Si1−xGex (0 < x < 1) from a Liquid Phase

   Jamoliddin Razzokov

   ГлаваSilicon and Solar Cell TechnologiesAdvances in Science, Technology & Innovation/Advances in science, technology & innovation2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.chapter.000710

2. Preparation and Structure of Solid Solutions (Ge2)1−x–y(GaAs)x(ZnSe)y

   A. Sh. Razzokov, V. V. Girzhon, D. E. Koshchanova

   ГлаваSemiconductor materials and interfacesAdvances in Science, Technology & Innovation/Advances in science, technology & innovation2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.chapter.000712

3. Growth and structural study of the solid solution Si1−xGex (0 < x < 1)

   Alijon Shonazarovich RAZZOKOV, Serhii Ivanovych Petrushenko, Mateusz Fijalkowski +2

   СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Crystal Growth2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.006586