O. G. Ershov

2 та иш

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Infrared laser (λ=3.2 μm) based on broken-gap type II heterojunctions with improved temperature characteristics

   K. D. Moiseev, M. P. Mikhaiova, O. G. Ershov +1

   МақолаAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000151

2. Investigation of spontaneous and coherent radiation in the 3–4 μm wavelength range in an InGaAsSb/AlGaSbAs laser heterostructure

   E. A. Grebenshchikova, O. G. Ershov, B. E. Zhurtanov +3

   МақолаSemiconductor Lasers and Optical DevicesTechnical Physics Letters19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000246