M. Aidaraliev

2 та иш

A. F. Ioffe Physicotechnical Institute, St. Petersburg

1. Long-wavelength uncooled sources of λ=5–6 μ radiation using graded-index InAsSb(P) layers grown by liquid-phase epitaxy

   M. Aidaraliev, N. V. Zotova, S. A. Karandashev +4

   МақолаAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19980 иқтибос

   ABIABI:AkademIndex/openalex/1998.article.000120

2. Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures

   M. Aidaraliev, N. V. Zotova, S. A. Karandashev +4

   МақолаSpectroscopy and Laser ApplicationsTechnical Physics Letters19980 иқтибос

   ABIABI:AkademIndex/openalex/1998.article.000255