E. L. Portnoĭ

5 та иш

Glasgow University, Glasgow, Scotland, UK

1. Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions

   D. P. Bhattacharyya, D. A. Vinokurov, G.M. Gusinskii +6

   МақолаIon-surface interactions and analysisTechnical Physics Letters19981 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.452985

2. Phase effects in a semiconductor laser with diffraction extraction of radiation

   M. A. Kaliteevskiĭ, E. L. Portnoĭ, G. S. Sokolovskiĭ

   МақолаStrong Light-Matter InteractionsTechnical Physics Letters19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000135

3. Q-switching in single-heterojunction lasers and generation of ultrahigh-power picosecond optical pulses

   G. Venus, I. M. Gadzhiev, A. Gubenko +2

   МақолаLaser-Plasma Interactions and DiagnosticsTechnical Physics Letters19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000188

4. Near-threshold mode synchronization and Q switching in diode lasers with a fast saturated absorber

   A. E. Gubenko, G. Venus, I. M. Gadzhiev +1

   МақолаOptical Network TechnologiesTechnical Physics Letters19990 иқтибос

   ABIABI:AkademIndex/openalex/1999.article.000093

5. Picosecond semiconductor lasers with a multisection saturable absorber, fabricated by heavy ion implantation

   G. Venus, I. M. Gadzhiev, A. E. Gubenko +2

   МақолаAdvanced Fiber Laser TechnologiesTechnical Physics Letters19990 иқтибос

   ABIABI:AkademIndex/openalex/1999.article.000142