T. Blank

1 та иш

Ioffe Physicotechnical Institute RAS

1. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

   Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.603414