Josef Stejskal

1 та иш

Institute of Chemical Technology, Technická 5, 166 28 Prague 6, Czech Republic

1. In‐situ doping and implantation of GaN layers with Mn

   Zdeněk Sofer, David Sedmidubský, Josef Stejskal +7

   МақолаGaN-based semiconductor devices and materialsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20090 иқтибос

   ABIABI:AkademIndex/openalex/2009.article.000176