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David Sedmidubský

7 та иш

166 28 Prague 6, Czech Republic

  1. Neutron diffraction as a precise and reliable method for obtaining structural properties of bulk quantities of graphene

    Zdeněk Sofer, Petr Šimek, Ondřej Jankovský +3

    МақолаGraphene research and applicationsNanoscale20141 иқтибос
    ABI

  2. In‐situ doping and implantation of GaN layers with Mn

    Zdeněk Sofer, David Sedmidubský, Josef Stejskal +7

    МақолаGaN-based semiconductor devices and materialsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20090 иқтибос
    ABI

  3. Separation of thorium ions from wolframite and scandium concentrates using graphene oxide

    Ondřej Jankovský, David Sedmidubský, Petr Šimek +5

    МақолаExtraction and Separation ProcessesPhysical Chemistry Chemical Physics20150 иқтибос
    ABI

  4. Definitive proof of graphene hydrogenation by Clemmensen reduction: use of deuterium labeling

    Zdeněk Sofer, Ondřej Jankovský, Alena Libánská +6

    МақолаGraphene research and applicationsNanoscale20150 иқтибос
    ABI

  5. Use of deuterium labelling—evidence of graphene hydrogenation by reduction of graphite oxide using aluminium in sodium hydroxide

    Ondřej Jankovský, Petr Šimek, Michal Nováček +6

    МақолаGraphene research and applicationsRSC Advances20150 иқтибос
    ABI

  6. Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

    M. Maryško, J. Hejtmánek, V. V. Laguta +9

    МақолаZnO doping and propertiesJournal of Applied Physics20150 иқтибос
    ABI

  7. Erbium ion implantation into diamond – measurement and modelling of the crystal structure

    Jakub Cajzl, Pavla Nekvindová, Anna Macková +8

    МақолаDiamond and Carbon-based Materials ResearchPhysical Chemistry Chemical Physics20170 иқтибос
    ABI