J. Hejtmánek

4 та иш

Institute of Physics ASCR, v.v.i., Cukrovarnická 10, 162 53 Prague 6, Czech Republic

1. In‐situ doping and implantation of GaN layers with Mn

   Zdeněk Sofer, David Sedmidubský, Josef Stejskal +7

   МақолаGaN-based semiconductor devices and materialsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20090 иқтибос

   ABIABI:AkademIndex/openalex/2009.article.000176

2. Structure and Electric Transport in LaCo0.67Cu0.33O3

   M. Dlouhá, J. Hejtmánek, Z. Jirák +3

   МақолаMagnetic and transport properties of perovskites and related materialsJournal of Superconductivity and Novel Magnetism20100 иқтибос

   ABIABI:AkademIndex/openalex/2010.article.000191

3. Test System for Thermoelectric Modules and Materials

   J. Hejtmánek, K. Knı́žek, V. Švejda +2

   МақолаAdvanced Thermoelectric Materials and DevicesJournal of Electronic Materials20140 иқтибос

   ABIABI:AkademIndex/openalex/2014.article.000104

4. Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

   M. Maryško, J. Hejtmánek, V. V. Laguta +9

   МақолаZnO doping and propertiesJournal of Applied Physics20150 иқтибос

   ABIABI:AkademIndex/openalex/2015.article.000214