Vyacheslav N. Giryansky

1 та иш

Arifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, Uzbekistan

1. Influence of Defects on Low Temperature Diffusion of Boron in SiC

   I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.390730