Khusniddin J. Matchonov

4 та иш

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

1. Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Khaitbaev +3

   МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20245 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.290705

2. Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium

   Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +4

   МақолаSemiconductor materials and interfacesEast European Journal of Physics20243 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.001723

3. Doping of Silicon with Gadolinium Atoms – Structural Distribution and Raman Spectral Changes

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Jonibek J. Khamdamov +3

   МақолаIon-surface interactions and analysisEast European Journal of Physics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.001644

4. Phase Transformations and Structural Transformations of Manganese Silicides in the Si-Mn System

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Jonibek J. Khamdamov +2

   МақолаSemiconductor materials and interfacesEast European Journal of Physics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.015874