Mira Ruzimovna Bekchanova

4 та иш

Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, Uzbekistan

1. Study of Optical, Electrophotographic and Holographic Parameters of As-Se Condensates from the Prehistory of the Original Bulk Materials

   Sharifa B. Utamuradova, Z. T. Azamatov, A I Popov +3

   МақолаPhase-change materials and chalcogenidesEast European Journal of Physics20242 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.001583

2. Current Transfer Mechanism in a Thin-Based Heterosystem Based on A2B6 Compounds

   Sharifa B. Utamuradova, F. A. Giyasova, Khayot Bakhronov +3

   МақолаSemiconductor materials and interfacesEast European Journal of Physics20251 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.002404

3. HOLOGRAPHIC PROPERTIES OF CHALCOGENIDE GLASSY SEMICONDUCTOR (CGS) FILMS

   Z. T. Azamatov, Mira Ruzimovna Bekchanova, Abror B. Bakhromov

   МақолаPhase-change materials and chalcogenides20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.009652

4. Investigation of the Processes Involved in the Formation of Pyroxene Materials during Solar Melting in a Large Solar Furnace

   Muhammad S. Paizullakhanov, F. A. Giyasova, Khayot Bakhronov +6

   МақолаHigh-Temperature Coating BehaviorsJournal of Ovonic Research20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.article.010807