Shahriyor B. Norkulov

4 та иш

Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

1. Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium

   Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +4

   МақолаSemiconductor materials and interfacesEast European Journal of Physics20243 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.001723

2. Defective Structure of Silicon Doped with Dysprosium

   Khodjakbar S. Daliev, Sharifa B. Utamuradova, Alisher Khaitbaev +3

   МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20243 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.412289

3. Changes in the Structure and Properties of Silicon During Ytterbium Doping: The Results of o Comprehensive Analysis

   Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +3

   МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20242 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.432368

4. Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

   Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2

   МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009030