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Sh. M. Kuliyev

6 та иш

Physical-Technical Institute of Uzbekistan Academy of Sciences 1 , Tashkent 100084, Uzbekistan

  1. Dependence of the accuracy of the silicon diode temperature sensors for cryogenic thermometry on the spread of their parameters

    R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

    МақолаCalibration and Measurement TechniquesLow Temperature Physics20234 иқтибос
    ABI

  2. Distribution of impurities in base-depleted region of diode temperature sensor

    R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

    МақолаChalcogenide Semiconductor Thin FilmsLow Temperature Physics20242 иқтибос
    ABI

  3. Highly sensitive photodetector based on ge double-barrier punch-through structure

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +1

    МақолаSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment20151 иқтибос
    ABI

  4. Limiting characteristics of silicon diode temperature sensors for determining the maximum temperature with specified measurement accuracy

    Damir Istamov, O. A. Abdulkhaev, Sh. M. Kuliyev

    МақолаAdvanced MEMS and NEMS TechnologiesUNEC journal of engineering and applied sciences20251 иқтибос
    ABI

  5. Electrophysical and photoelectric characteristics of a three-barrier photodiode GaAs structure

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

    МақолаSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment20180 иқтибос
    ABI

  6. Controlling voltage drops in silicon diodes by electron irradiation and thermal treatment

    A. V. Karimov, A. Z. Rakhmatov, O. A. Abdulkhaev +3

    МақолаPulsed Power Technology ApplicationsTechnology and design in electronic equipment20180 иқтибос
    ABI