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Иш: Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers

1. The influence of inversion layer on the characteristics of the contact-adjoining layer in solar-cell silicon Schottky MTIS structures

   D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

   МақолаSemiconductor materials and interfacesphysica status solidi (a)19860 иқтибос

   ABIABI:AkademIndex/openalex/1986.article.000099