Ушбу иш иқтибос қилган ишлар

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Иш: On the Mechanism of Current Passage in Gallium Phosphide Films Excited by Light or a Beam of Accelerated Electrons

1. Electronic Processes in Non-Crystalline Materials

   N. F. Mott, E. A. Davis, A. Lösche

   Боб197213 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.277848

2. Сарлавҳасиз

   Бошқа13 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.602825

3. Quantum yield of current carriers excited by electron beams and electron penetration depth in thin GaP films

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   МақолаSemiconductor materials and interfacesphysica status solidi (a)19832 иқтибос

   ABIABI:AkademIndex/openalex/1983.article.000065

4. Investigation of Current Characteristics of Thin-Film Structures Based on GaP under the Action of an Electron Beam

   V. M. Rubinov, M. Tuychiev

   МақолаChemical and Physical Properties of Materialsphysica status solidi (a)19821 иқтибос

   ABIABI:AkademIndex/openalex/1982.article.000071

5. The influence of heating on the characteristics of the electron-excited conduction in gallium phosphide films

   S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

   МақолаSemiconductor Quantum Structures and Devicesphysica status solidi (a)19831 иқтибос

   ABIABI:AkademIndex/openalex/1983.article.000076