Ушбу иш иқтибос қилган ишлар

12 та иш

Иш: The influence of inversion layer on the characteristics of the contact-adjoining layer in solar-cell silicon Schottky MTIS structures

1. MIS and SIS solar cells

   J. Shewchun, D.E. Burk, M. B. Spitzer

   Мақола19802 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.659164

2. Depletion widths of the metal-insulator semiconductor (MIS) structure

   Chein Wei Jen, Chung Len Lee, Tan Fu Lei

   Мақола19812 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.659165

3. A comparison of majority- and minority-carrier silicon MIS solar cells

   K.K. Ng, H.C. Card

   Мақола19802 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.659608

4. Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers

   S. A. Asimov, D. A. Aronov, D. K. Isamukhamedova +1

   МақолаSemiconductor materials and interfacesphysica status solidi (a)19821 иқтибос

   ABIABI:AkademIndex/openalex/1982.article.000074

5. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.659602

6. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.659603

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.659604

8. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.659605

9. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.659606

10. Сарлавҳасиз

    Бошқа1 иқтибос

    ABIABI:AkademIndex/openalex/2026.other.659607

11. Сарлавҳасиз

    Бошқа1 иқтибос

    ABIABI:AkademIndex/openalex/2026.other.659609

12. Сарлавҳасиз

    Бошқа1 иқтибос

    ABIABI:AkademIndex/openalex/2026.other.659610