Direct bonding of silicon wafers with a diffusion layer
V. B. VoronkovA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgE. G. GukA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgВ. А. КозловA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. B. ShumanA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Аннотация
The possibility of solid-phase direct bonding of silicon wafers having p +-or n +-type diffusion layers with a high surface dopant concentration has been demonstrated for the first time.
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