Ушбу иш иқтибос қилган ишлар

3 та иш

Иш: Unstrained epitaxial InxGa1−xAs films obtained on porous GaAs

1. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.522140

2. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.522141

3. Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

   V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3

   МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19991 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.522142