Electrical properties of Schottky diodes using high-resistivity CdTe crystals
V. O. UkrainetsA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgГ. А. ИльчукA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgN. A. UkrainetsA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgYu. V. RudA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgV. I. Ivanov-OmskiĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg
ABI
Аннотация
The Schottky barrier height is measured for single crystals doped with the halogens Cl, Br, and I during growth by chemical transport reactions. The measurements are made using a modification of the F(V) function [N. V. Agrinskaya, Mater. Sci. Eng. B 16, 172 (1993)] proposed by the authors.
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