Ушбу иш иқтибос қилган ишлар

12 та иш

Иш: Radiation Hardness of Silicon Carbide

1. Сарлавҳасиз

   Бошқа6 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.526570

2. High-resistance layers in <i>n</i>-type 4H-silicon carbide by hydrogen ion implantation

   Ravi K. Nadella, M. A. Capano

   Мақола19972 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.155789

3. Deep level defects in alpha particle irradiated 6H silicon carbide

   George C. Rybicki

   Мақола19952 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.155796

4. Defects in neutron irradiated SiC

   V. Nagesh, J. W. Farmer, R. F. Davis +1

   Мақола19872 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.526565

5. Сарлавҳасиз

   Бошқа2 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.526571

6. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

   A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3

   МақолаSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics20001 иқтибос

   ABIABI:AkademIndex/openalex/2000.article.000005

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.526564

8. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.526566

9. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.526567

10. Сарлавҳасиз

    Бошқа1 иқтибос

    ABIABI:AkademIndex/openalex/2026.other.526568

11. Сарлавҳасиз

    Бошқа1 иқтибос

    ABIABI:AkademIndex/openalex/2026.other.526569

12. Сарлавҳасиз

    Бошқа1 иқтибос

    ABIABI:AkademIndex/openalex/2026.other.526572