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Иш: Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

1. 4H-SiC High Temperature Spectrometers

   Evgenia V. Kalinina, N. B. Strokan, Alexander M. Ivanov +5

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20070 иқтибос

   ABIABI:AkademIndex/openalex/2007.article.000197