Ушбу иш иқтибос қилган ишлар

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Иш: Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

1. High-dose Al-implanted 4H-SiC p+-n-n+ junctions

   E. V. Kalinina, G. Kholujanov, В. Н. Соловьев +11

   Мақола20004 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.534891

2. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

   Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.603414

3. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.603410

4. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.603411

5. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.603412

6. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.603413