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Иш: Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

1. 6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy

   Anatoly M. Strel’chuk, A. А. Lebedev, A. E. Cherenkov +6

   МақолаSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000230