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Иш: About the Interface Between the Higher Manganese Silicide Film and Si (111)

Сарлавҳасиз
Бошқа1117 иқтибос
ABI
Quantum Dot Superlattice Thermoelectric Materials and Devices
T. C. Harman, Patrick J. Taylor, Michael Walsh +1
Мақола20025 иқтибос
ABI
Electron microscopic investigation of MnSi1.7 layers on Si(001)
Anna Mogilatenko, M. Falke, S. Teichert +3
Мақола20024 иқтибос
ABI
Structural observation of Mn silicide islands on Si(111) 7×7 surface with UHV-TEM
Q. Zhang, Masaki Takeguchi, Miyoko Tanaka +1
Мақола20024 иқтибос
ABI
On the possibility of developing thermoelectric sensors based on multielement higher manganese silicide film structures
T. S. Kamilov, D. K. Kabilov, I. S. Samiev +1
Мақола20053 иқтибос
ABI
About the mechanism of formation and growth of the higher manganese silicide films on silicon
T. S. Kamilov, D.K. Kabilov, I.S. Samiev +6
МақолаSemiconductor materials and interfaces20053 иқтибос
ABI
Crystal structure of the films of highest manganese silicide on silicon
V. V. Klechkovskaya, T. S. Kamilov, S. I. Adasheva +2
Мақола19943 иқтибос
ABI
MnSi∼1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique
Junling Yang, Nuofu Chen, Zhikai Liu +4
Мақола20013 иқтибос
ABI
Role of the silicon dioxide in formation of higher manganese silicide films
T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +3
МақолаAdvanced Thermoelectric Materials and Devices20042 иқтибос
ABI
Morphology of ultrathin manganese silicide on Si(111)
Tadaaki Nagao, Satoru Ohuchi, Yasuyuki Matsuoka +1
Мақола19992 иқтибос
ABI
The thermoelectric radiation detector based on the multielement structures of the higher manganese silicide films
T. S. Kamilov, D.K. Kabilov, I.S. Samiev +2
МақолаSemiconductor materials and interfaces20051 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI