Ушбу иш иқтибос қилган ишлар

2 та иш

Иш: The rate of surface generation of charge carriers at the semiconductor-glass interface

1. The Pulsed MIS Capacitor. A Critical Review

   Jaehyeon Kang, D.K. Schroder

   Шарҳ мақола19857 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.527893

2. The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

   П. Б. Парчинский, С. И. Власов, Aslan Nasirov

   МақолаGlass properties and applicationsSemiconductors20041 иқтибос

   ABIABI:AkademIndex/openalex/2004.article.000159