Ушбу иш иқтибос қилган ишлар

8 та иш

Иш: Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region

1. Physics of Semiconductor Devices

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3. Photovoltaic X-ray detectors based on epitaxial GaAs structures

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5. Bilaterally Sensitive Photodiode Structures in the System Gallium Arsenide–Cadmium Sulfide

   Kutbiddin Ilovitddinovich Vakhobov, A. V. Karimov, Abdumalik Gaibov +2

   МақолаAdvanced Semiconductor Detectors and MaterialsJournal of Engineering Physics and Thermophysics20031 иқтибос

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6. Influence of the thickness of the base region of structures with a Schottky barrier on their current and photoelectric characteristics

   D. M. Edgorova

   МақолаSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20071 иқтибос

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7. Photophysical characteristics of microlayer photodiode pAlGaInAs(Zn)-nGaAs-Au structures

   D. M. Edgorova, F. M. Ashrapov

   МақолаSemiconductor Quantum Structures and DevicesJournal of Engineering Physics and Thermophysics20071 иқтибос

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8. Сарлавҳасиз

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