Ушбу ишга иқтибос қилган ишлар

1 та иш

Иш: Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

1. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

   Kh. N. Zhuraev, А. Yusupov, A. G. Gulyamov +3

   МақолаSilicon Carbide Semiconductor TechnologiesJournal of Engineering Physics and Thermophysics20201 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.470164