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Ушбу иш иқтибос қилган ишлар

15 та иш

Иш: The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

  1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

    Мақола201111 иқтибос
    ABI

  2. Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

    Sylvain Barraud, Matthieu Berthomé, R. Coquand +7

    Мақола20126 иқтибос
    ABI

  3. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

    Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde +4

    Мақола20116 иқтибос
    ABI

  4. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    МақолаSemiconductor materials and devicesTechnical Physics Letters20186 иқтибос
    ABI

  5. Quantum corrections in the simulation of decanano MOSFETs

    Asen Asenov, A. R. Brown, J.R. Watling

    Мақола20034 иқтибос
    ABI

  6. Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits

    Ming-Long Fan, Shao‐Yu Yang, Vita Pi‐Ho Hu +3

    Мақола20144 иқтибос
    ABI

  7. RTN distribution comparison for bulk, FDSOI and FinFETs devices

    Louis Gerrer, Salvatore Amoroso, Razaidi Hussin +1

    Мақола20143 иқтибос
    ABI

  8. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

    A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

    МақолаSemiconductor materials and devicesResults in Physics20183 иқтибос
    ABI

  9. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

    Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

    МақолаSemiconductor materials and devicesTechnical Physics20193 иқтибос
    ABI

  10. Double-gate junctionless transistor model including short-channel effects

    Bruna Cardoso Paz, Fernando Avila Herrera, A. Cerdeira +1

    Мақола20152 иқтибос
    ABI

  11. Ultralow-Power Design in Near-Threshold Region

    Dejan Marković, C.C. Wang, Louis P. Alarcón +2

    Мақола20102 иқтибос
    ABI

  12. Random telegraph-signal noise in junctionless transistors

    A. N. Nazarov, Isabelle Ferain, Nima Dehdashti Akhavan +3

    Мақола20112 иқтибос
    ABI

  13. Performance optimization of nanoscale junctionless transistors through varying device design parameters for ultra-low power logic applications

    Debapriya Basu Roy, Abhijit Biswas

    Мақола20162 иқтибос
    ABI

  14. Modeling Short-Channel Effects in Asymmetric Junctionless MOSFETs With Underlap

    Nivedita Jaiswal, Abhinav Kranti

    Мақола20182 иқтибос
    ABI

  15. Сарлавҳасиз

    Бошқа2 иқтибос
    ABI