Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

1. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

   Gunel Imanova, I. R. Bekpulatov

   МақолаSemiconductor materials and interfacesAmerican Journal of Nano Research and Applications20211 иқтибос

   ABIABI:AkademIndex/openalex/2021.article.002486

2. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

   I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

   МақолаSemiconductor materials and interfacesE3S Web of Conferences20211 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.571863

3. Study of polymer coatings implanted with high-energy ion beams

   B.D. Igamov, A.I. Kamardin, I.Yu Kochemasov +4

   МақолаPolymer Nanocomposite Synthesis and IrradiationNext Materials20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.article.004309