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31 та иш

Иш: Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

  1. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

    A. É. Atamuratov, А. Yusupov, Khidir A. Adinaev

    МақолаAdvanced Energy Technologies and Civil Engineering InnovationsInorganic Materials20015 иқтибос
    ABI

  2. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    МақолаSemiconductor materials and devicesDoklady Physics20074 иқтибос
    ABI

  3. Impact of Off-State Stress and Negative Bias Temperature Instability on Degradation of Nanoscale pMOSFET

    Nam-Hyun Lee, Hyung-wook Kim, Bongkoo Kang

    Мақола20114 иқтибос
    ABI

  4. Origin of NBTI variability in deeply scaled pFETs

    B. Kaczer, Tibor Grasser, Ph. Roussel +6

    Мақола20103 иқтибос
    ABI

  5. Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stress

    Ivan A. Starkov, A. S. Starkov

    Мақола20133 иқтибос
    ABI

  6. Channel-Hot-Carrier Degradation and Bias Temperature Instabilities in CMOS Inverters

    J. Martín-Martínez, Simone Gerardin, E. Amat +5

    Мақола20093 иқтибос
    ABI

  7. Method to predict length dependency of negative bias temperature instability degradation in p-MOSFETs

    Jihoon Seo, Gang-Jun Kim, Donghee Son +3

    Мақола20163 иқтибос
    ABI

  8. Effect of oxide-trapped charge on the anomalous drain avalanche hot carrier degradation of a SiO2 dielectric nMOSFET

    Yeohyeok Yun, Jihoon Seo, Young-Kyu Kwon +1

    Мақола20193 иқтибос
    ABI

  9. A propagation concept of negative bias temperature instability along the channel length in p-type metal oxide field effect transistor

    Boualem Djezzar, Hakim Tahi, Abdelmadjid Benabdelmoumene +1

    Мақола20132 иқтибос
    ABI

  10. Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs

    Souvik Mahapatra, C.D. Parikh, V. Ramgopal Rao +2

    Мақола20002 иқтибос
    ABI

  11. Analysis of hot-carrier-induced degradation mode on pMOSFET's

    F. Matsuoka, Hiroshi Iwai, H. Hayashida +3

    Мақола19902 иқтибос
    ABI

  12. AC versus DC hot-carrier degradation in n-channel MOSFETs

    K. Mistry, Barry M. Doyle

    Мақола19932 иқтибос
    ABI

  13. Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress

    Yeohyeok Yun, Jihoon Seo, Donghee Son +1

    Мақола20182 иқтибос
    ABI

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