Ушбу иш иқтибос қилган ишлар

9 та иш

Иш: Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

1. Photothermovoltaic Effect in p-Si−n-(Si2)1 –x–y(Ge2)x(ZnSe)y Structure

   А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

   МақолаPhase-change materials and chalcogenidesApplied Solar Energy20198 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.278129

2. Direct-bandgap emission from hexagonal Ge and SiGe alloys

   Elham Fadaly, Alain Dijkstra, Jens Renè Suckert +17

   Мақола20206 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.278128

3. Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method

   Kwang-Won Jo, Wu-Kang Kim, Mitsuru Takenaka +1

   Мақола20194 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.278127

4. Study of certain properties of Si-Si1−xGex (0 ≤ x ≤ 1) structures grown from a restricted tin-based solution-melt by liquid-phase epitaxy

   Б. Сапаев, A. S. Saidov

   МақолаSemiconductor materials and interfacesSemiconductors20051 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.278122

5. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.278123

6. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.278124

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.278125

8. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.278126

9. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.278130