Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure

1. Photoelectric Characteristics of the Heterojunction n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y

   Akramjon Y. Boboev

   МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics20241 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.467189

2. The Mechanism of Current Transfer in n-GaAs – p(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y Heterostructures

   С. З. Зайнабидинов, Khotamjon J. Mansurov, Akramjon Y. Boboev +1

   МақолаSemiconductor materials and interfacesEast European Journal of Physics20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.008697