The Mechanism of Current Transfer in n-GaAs – p(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y Heterostructures
С. З. ЗайнабидиновAndijan state university named after Z.M. Babur, Andijan, UzbekistanKhotamjon J. MansurovAndijan state university named after Z.M. Babur, Andijan, UzbekistanAkramjon Y. BoboevAndijan state university named after Z.M. Babur, Andijan, Uzbekistan; Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, UzbekistanJakhongir N. UsmonovAndijan state university named after Z.M. Babur, Andijan, Uzbekistan
ABI
Аннотация
The I-V characteristics of heterostructures n-GaAs – p-(ZnSe)1–x–y(Ge2)x(GaAs1–δBiδ) exhibit a characteristic quadratic law - J~V2 I-V curve, followed by a sharp pre-breakdown current growth, which well explains the observed straight branch of the I-V characteristics and this regularity remains unchanged at different temperatures. The analysis of the I-V characteristics of n‑GaAs‑p‑(ZnSe)1‑x‑y(Ge2)x(GaAs1–δBiδ) heterostructures with an extended intermediate solid solution layer shows that the drift mechanism of charge transport predominates under forward bias conditions.
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