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Jakhongir N. Usmonov

4 та иш

Andijan State University, 170100, Andijan, Uzbekistan

  1. Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

    С. З. Зайнабидинов, А. С. Саидов, Akramjon Y. Boboev +1

    МақолаSemiconductor Quantum Structures and DevicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20214 иқтибос
    ABI

  2. An Optimized Ultrasonic Spray Pyrolysis Device for The Production of Metal Oxide Films and Their Morfology

    С. З. Зайнабидинов, Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev +1

    МақолаZnO doping and propertiesEast European Journal of Physics20243 иқтибос
    ABI

  3. Influence of Germanium and Zinc Selenium Nanocrystals on the Photoelectric Properties of the n-GaAs – p-(GaAs)0.69(Ge2)0.17(ZnSe)0.14 Heterostructure

    С. З. Зайнабидинов, Akramjon Y. Boboev, Jakhongir N. Usmonov

    МақолаSemiconductor materials and interfacesAlternative Energy and Ecology (ISJAEE)20191 иқтибос
    ABI

  4. The Mechanism of Current Transfer in n-GaAs – p(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y Heterostructures

    С. З. Зайнабидинов, Khotamjon J. Mansurov, Akramjon Y. Boboev +1

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20240 иқтибос
    ABI