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13 та иш

Иш: The Mechanism of Current Transfer in n-GaAs – p(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y Heterostructures

  1. On the theory of sublinear current-voltage characteristics of semiconductor structures

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    Мақола19788 иқтибос
    ABI

  2. Dilute nonisovalent (II-VI)-(III-V) semiconductor alloys: Monodoping, codoping, and cluster doping in ZnSe-GaAs

    L. G. Wang, Alex Zunger

    Мақола20037 иқтибос
    ABI

  3. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

    Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

    МақолаChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20136 иқтибос
    ABI

  4. Statistics of Inter‐Impurity Recombination of Electrons and Holes in Semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (b)19685 иқтибос
    ABI

  5. Structural Peculiarities of the (ZnSe)1 – x – y(Ge2)x(GaAs1 – δBiδ)y Solid Solution with Various Nanoinclusions

    С. З. Зайнабидинов, Sharifa B. Utamuradova, Akramjon Y. Boboev

    МақолаChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20224 иқтибос
    ABI

  6. Possible influence of nonequilibrium carrier recombination rate saturation on photocell operation

    A. Yu. Leĭderman

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20084 иқтибос
    ABI

  7. Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure

    S.Z. Zaynabidinov, А. С. Саидов, Akramjon Y. Boboev +1

    МақолаSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences20222 иқтибос
    ABI

  8. Effect of Uniaxial Elastic Deformation on the Current–Voltage Characteristic of Surface-Barrier Sb–p-Si〈Mn〉–Au Diodes

    О. О. Маматкаримов, О. Химматкулов, I. G. Tursunov

    МақолаSemiconductor materials and interfacesSemiconductors20202 иқтибос
    ABI

  9. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    А. С. Саидов, A. Yu. Leĭderman, Sh. N. Usmonov +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20201 иқтибос
    ABI

  10. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  11. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  12. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  13. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI