Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Mechanisms of Current Transition in High Compensated Silicon Samples with Zinc Nanoclusters

1. Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

   Э. У. Арзикулов, M. Radzhabova, Xuemin Cui +6

   МақолаSemiconductor materials and interfacesEast European Journal of Physics20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.010089

2. Current Mechanisms in Zinc Diffusion-doped Silicon Samples at T = 300 K

   Э. У. Арзикулов, M. Radzhabova, S. N. +4

   ПрепринтAdvancements in Semiconductor Devices and Circuit DesignResearch Square20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.preprint.000148