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Иш: STUDYING THE INFLUENCE OF PROTON IRRADIATION ON THE DISTRIBUTION PROFILE OF Pt AND Cr IN SURFACE LAYERS n-Si˂Pt˃, n-Si˂Сr˃ USING ELLIPSOMETRIC SPECTROSCOPY

Raman spectroscopy of silicon, doped with platinum and irradiated by protons
Sharifa B. Utamuradova, Kh.S. Daliev, А. В. Станчик +1
МақолаSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20239 иқтибос
ABI
Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure
N. A. Turgunov, Elmurod Kh. Berkinov, D. Kh. Mamajonova
МақолаSilicon and Solar Cell TechnologiesJournal of Nano- and Electronic Physics20218 иқтибос
ABI
Accumalations of impurity Ni atoms and their effect on the electrophysical properties of Si
N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova
Мақола20237 иқтибос
ABI
PROCESSES OF DEFECT FORMATION IN SILICON DIFFUSIONALLY DOPED WITH PLATINUM AND IRRADIATED WITH PROTONS
Sh.B. Utamuradov, Shakhrukh Kh. Daliev, D.A. Rakhmanov +4
МақолаSilicon and Solar Cell TechnologiesEurasian Physical Technical Journal20234 иқтибос
ABI
Raman spectroscopy of PtSi formation at the Pt/Si(100) interface
J. C. Tsang, Y. Yokota, R. Matz +1
Мақола19844 иқтибос
ABI
Nuclear instruments and methods in physics research section B: Beam interactions with materials and atoms
E. Punzón-Quijorna
Мақола20243 иқтибос
ABI
On the Properties of the Si-SiO2 Transition Layer in Multilayer Silicon Structures
Shakhrukh Kh. Daliev, Fayzulla A. Saparov
МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20233 иқтибос
ABI
Preparation of N-Si-P-GaSe Heterojunctions Based on an Amorphous GaSe Layer Without Impurities and Study of Their Electrical Properties
R. S. Madatov, A. S. Alekperov, F.N. Nurmammadova +2
Мақола20242 иқтибос
ABI