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Ушбу иш иқтибос қилган ишлар

10 та иш

Иш: Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

  1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

    Мақола201111 иқтибос
    ABI

  2. Short-channel effects in SOI MOSFETs

    S. Veeraraghavan, J.G. Fossum

    Мақола19897 иқтибос
    ABI

  3. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    ПрепринтAdvancements in Semiconductor Devices and Circuit Design20216 иқтибос
    ABI

  4. Optimization of vertically stacked nanosheet FET immune to self-heating

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    МақолаSemiconductor materials and devicesMicro and Nanostructures20235 иқтибос
    ABI

  5. Physical origin of negative differential resistance in SOI transistors

    Liam McDaid, Steven Hall, Phil Mellor +2

    Мақола19895 иқтибос
    ABI

  6. Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits

    Woojin Ahn, SangHoon Shin, Chang‐Ming Jiang +3

    Мақола20184 иқтибос
    ABI

  7. Self-Consistent Simulation of Heating Effects in Nanoscale Devices

    Dragica Vasileska, Stephen M. Goodnick, Katerina Raleva

    Мақола20093 иқтибос
    ABI

  8. Performance estimation of junctionless multigate transistors

    Chi‐Woo Lee, Isabelle Ferain, Aryan Afzalian +4

    Мақола20093 иқтибос
    ABI

  9. SOI versus bulk-silicon nanoscale FinFETs

    J.G. Fossum, Zhenming Zhou, L. Mathew +1

    Мақола20092 иқтибос
    ABI

  10. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI