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15 та иш

Иш: Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

  1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 иқтибос
    ABI

  2. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

    Jo`shqin Abdullayev, I. B. Sapaev

    Мақола202413 иқтибос
    ABI

  3. Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

    Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza +3

    Мақола201211 иқтибос
    ABI

  4. An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs

    Regiane Ragi, Rafael Nobrega, Ulysses Rondina Duarte +1

    Мақола201611 иқтибос
    ABI

  5. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаSemiconductor materials and interfacesEast European Journal of Physics202410 иқтибос
    ABI

  6. GaN nanowire ultraviolet photodetector with a graphene transparent contact

    A. V. Babichev, H. Zhang, Pierre Lavenus +5

    Мақола201310 иқтибос
    ABI

  7. Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays

    Biswajit Pal, Kalyan Jyoti Sarkar, P. Banerji

    Мақола201910 иқтибос
    ABI

  8. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаSemiconductor materials and interfacesPhysical Sciences and Technology20249 иқтибос
    ABI

  9. Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

    Dharmapura H. K. Murthy, Tao Xu, Wanghua Chen +11

    Мақола20119 иқтибос
    ABI

  10. Improvement of carrier ballisticity in junctionless nanowire transistors

    Nima Dehdashti Akhavan, Isabelle Ferain, Pedram Razavi +2

    Мақола20119 иқтибос
    ABI

  11. A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

    Ingvar Åberg, Giuliano Vescovi, Damir Asoli +8

    Мақола20159 иқтибос
    ABI

  12. Electrical and optical properties of nanowires based solar cell with radial p-n junction

    O. V. Pylypova, А.А. Еvtukh, P.V. Parfenyuk +4

    Мақола20198 иқтибос
    ABI

  13. Controlled Doping Methods for Radial p/n Junctions in Silicon

    Rick Elbersen, Roald M. Tiggelaar, Alexander Milbrat +3

    Мақола20147 иқтибос
    ABI

  14. Theory of the Junctionless Nanowire FET

    Elena Gnani, A. Gnudi, Susanna Reggiani +1

    Мақола20116 иқтибос
    ABI

  15. A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers

    S.C. Jain, D.J. Roulston

    Мақола19912 иқтибос
    ABI