Асосий контентга ўтиш
AkademIndex

Маҳсулотлар

Ишлаб чиқувчилар учун

AkademBaseЭкотизим учун очиқ API
← Ишга қайтиш

Ушбу иш иқтибос қилган ишлар

22 та иш

Иш: The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

  1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 иқтибос
    ABI

  2. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

    Jo`shqin Abdullayev, I. B. Sapaev

    Мақола202413 иқтибос
    ABI

  3. Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

    Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza +3

    Мақола201211 иқтибос
    ABI

  4. An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs

    Regiane Ragi, Rafael Nobrega, Ulysses Rondina Duarte +1

    Мақола201611 иқтибос
    ABI

  5. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаSemiconductor materials and interfacesEast European Journal of Physics202410 иқтибос
    ABI

  6. GaN nanowire ultraviolet photodetector with a graphene transparent contact

    A. V. Babichev, H. Zhang, Pierre Lavenus +5

    Мақола201310 иқтибос
    ABI

  7. Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays

    Biswajit Pal, Kalyan Jyoti Sarkar, P. Banerji

    Мақола201910 иқтибос
    ABI

  8. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    МақолаChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20239 иқтибос
    ABI

  9. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаSemiconductor materials and interfacesPhysical Sciences and Technology20249 иқтибос
    ABI

  10. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    МақолаSemiconductor Quantum Structures and DevicesLow Temperature Physics20259 иқтибос
    ABI

  11. Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

    Dharmapura H. K. Murthy, Tao Xu, Wanghua Chen +11

    Мақола20119 иқтибос
    ABI

  12. Improvement of carrier ballisticity in junctionless nanowire transistors

    Nima Dehdashti Akhavan, Isabelle Ferain, Pedram Razavi +2

    Мақола20119 иқтибос
    ABI

  13. A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

    Ingvar Åberg, Giuliano Vescovi, Damir Asoli +8

    Мақола20159 иқтибос
    ABI

  14. Electrical and optical properties of nanowires based solar cell with radial p-n junction

    O. V. Pylypova, А.А. Еvtukh, P.V. Parfenyuk +4

    Мақола20198 иқтибос
    ABI

  15. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 иқтибос
    ABI

  16. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 иқтибос
    ABI

  17. Controlled Doping Methods for Radial p/n Junctions in Silicon

    Rick Elbersen, Roald M. Tiggelaar, Alexander Milbrat +3

    Мақола20147 иқтибос
    ABI

  18. Theory of the Junctionless Nanowire FET

    Elena Gnani, A. Gnudi, Susanna Reggiani +1

    Мақола20116 иқтибос
    ABI

  19. ENHANCEMENT OF POWER CONVERSION EFFICIENCY OF DYE-SENSITIZED SOLAR CELLS VIA INCORPORATION OF GAN SEMICONDUCTOR MATERIAL SYNTHESIZED IN HOT-WALL CHEMICAL VAPOR DEPOSITION FURNACE

    Olzat Toktarbaiuly

    Мақола20246 иқтибос
    ABI

  20. Study of the Inhomogeneities of Overcompensed Silicon Samples Doped with Manganese

    M. Sh. Isaev, U. T. Asatov, Makhmudjon A. Tulametov +2

    Мақола20242 иқтибос
    ABI

  21. Study of Silicide Formation in Large Diameter Monocrystalline Silicon

    A. T. Mamadalimov, Makhmudkhodja Sh. Isaev, Mukhammadsodik N. Mamatkulov +2

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20242 иқтибос
    ABI

  22. The Surface Layer Morphology of Si&lt;Cr&gt; Samples

    M. Sh. Isaev, A.I. Khudayberdieva, Mukhammadsodik N. Mamatkulov +2

    Мақола20242 иқтибос
    ABI