Morphological Studies of (Ge2)1-X(ZnSe)X Solid Solutions
A.Sh. RazzokovUrgench State University, Urgench, UzbekistanА. С. СаидовPhysical-Technical Institute NPO “Physics-Sun of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanM.A. ShonazarovaLeipzig University, Leipzig, GermanyJ.A. RazzakovUrgench State University, Urgench, UzbekistanD.E. KoshchanovaUrgench State University, Urgench, Uzbekistan
ABI
Аннотация
Single-crystal films of the (Ge2)1-x(ZnSe)x solid solution from a limited tin solution-melt in the temperature range from 1023 K to 803 K at a cooling rate of 1-1.5 K/min on an EPOC installation were grown on Ge substrates and GaAs. The gap between the substrates was 0.65÷1.2 mm. It was established that the lowest values of dislocation density (ND=2·104÷105 cm-2) were recorded in epitaxial films at TNC = 893 K. Technological conditions for obtaining GaAs- (Ge2)1-x(ZnSe)x heterostructure with a smooth boundary have been achieved. Film substrate and the supercooling temperature was ΔT = 7.2°C.
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