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Иш: Morphological Studies of (Ge2)1-X(ZnSe)X Solid Solutions
Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)
А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +5
ABISi‐Ge‐Metal Ternary Phase Diagram Calculations
Jean‐Pierre Fleurial, A. Borshchevsky
Мақола19904 иқтибосABIZnSe nanostructures: Synthesis, properties and applications
Qi Zhang, Huiqiao Li, Ying Ma +1
Мақола20163 иқтибосABI