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Иш: Features of Growing a Solid Solution Si1−xGex (0 < x < 1) from a Liquid Phase
Direct-bandgap emission from hexagonal Ge and SiGe alloys
Elham Fadaly, Alain Dijkstra, Jens Renè Suckert +17
Мақола20206 иқтибосABISi‐Ge‐Metal Ternary Phase Diagram Calculations
Jean‐Pierre Fleurial, A. Borshchevsky
Мақола19904 иқтибосABIObtaining Si-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub>-Si<sub>1-x</sub>Ge<sub>x</sub>-(Si<sub>1-x</sub>Ge<sub>x</sub>)<sub>1-z</sub>(Al<sub>1-y</sub>Ga<sub>y</sub>As)<sub>z</sub> Structures from a Tin Solution-Melt in a Single Technological Cycle
А. С. Саидов, A. Sh. Razzokov, С.И. Петрушенко +1
ABIEnergetic and kinetic aspects of the growth of pseudomorphic SiGe islands
Michael Becker, Silke Christiansen, M. Albrecht +2
Мақола20082 иқтибосABI