Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Phonons in 3C-, 4H-, and 6H-SiC

1. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

   I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

   МақолаSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy20181 иқтибос

   ABIABI:AkademIndex/openalex/2018.article.000197

2. Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates

   Joanna Wasyluk, T. S. Perova, С. А. Кукушкін +3

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20100 иқтибос

   ABIABI:AkademIndex/openalex/2010.article.000022