Ушбу ишга иқтибос қилган ишлар

5 та иш

Иш: Control of the formation of ultrathin CoSi2 layers during the rapid thermal annealing of Ti/Co/Ti/Si(100) structures

1. On the synthesis of nanoscale phases of metal silicides in the near-surface region of silicon and the study of their electronic structures by passing light

   Y. S. Ergashov, Д. А. Ташмухамедова, Б. Е. Умирзаков

   МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.104961

2. Energy spectra of SiO2 nanofilms formed on a silicon surface by ion implantation

   Y. S. Ergashov, Д. А. Ташмухамедова, Э. А. Раббимов

   МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201516 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.104958

3. Emission and optical properties of SiO2/Si thin films

   Д. А. Ташмухамедова, M. B. Yusupjanova

   МақолаSilicon Nanostructures and PhotoluminescenceJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20166 иқтибос

   ABIABI:AkademIndex/openalex/2016.article.000134

4. Electronic and Optical Properties of NiSi2/Si Nanofilms

   Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +1

   МақолаSurface and Thin Film PhenomenaTechnical Physics20193 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.402216

5. On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков

   МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.007102