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6 та иш

Иш: Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs

  1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 иқтибос
    ABI

  2. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаSemiconductor materials and interfacesEast European Journal of Physics202410 иқтибос
    ABI

  3. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 иқтибос
    ABI

  4. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

    МақолаSemiconductor materials and interfacesJournal of Electronic Materials20253 иқтибос
    ABI

  5. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

    J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

    МақолаSemiconductor materials and interfacesJournal of Electronic Materials20260 иқтибос
    ABI

  6. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

    Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

    МақолаSemiconductor materials and interfacesJournal of Electronic Materials20260 иқтибос
    ABI