Ушбу ишга иқтибос қилган ишлар

4 та иш

Иш: Electrophysical and Photoelectric Properties of Injection Photodiode Based on pSi–nCdS–In Structure and Influence of Ultrasonic Irradiation on them

1. Temperature dependence of width band gap in <i>In_xga_1-Xas</i>quantum well in presence of transverse strong magnetic field

   U. I. Erkaboev, N. A. Sayidov, Ulugbek Negmatov +2

   МақолаSemiconductor Quantum Structures and DevicesE3S Web of Conferences202310 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.000665

2. Solar Cells Based on Cu(In, Ga)Se2 Thin-Film Layers

   R. R. Kobulov, N. A. Matchanov, O. K. Ataboev +1

   МақолаChalcogenide Semiconductor Thin FilmsApplied Solar Energy20194 иқтибос

   ABIABI:AkademIndex/openalex/2019.article.000173

3. Current Transfer Mechanism in a Thin-Based Heterosystem Based on A2B6 Compounds

   Sharifa B. Utamuradova, F. A. Giyasova, Khayot Bakhronov +3

   МақолаSemiconductor materials and interfacesEast European Journal of Physics20251 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.002404

4. Synthesis and characterization by experimental and theory research suitable on the CdS and CdO materials

   I.B. Sapaev, Ganjaboy S. Boltaev, Б. Сапаев +4

   МақолаCopper-based nanomaterials and applicationsE3S Web of Conferences20231 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.432350