Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Silicon-germanium—a promise into the future?

1. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

   Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

   МақолаSemiconductor materials and interfacesSemiconductors20228 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.000429

2. The effect of silicon-germanium microheterojunctions on the parameters of silicon solar cells

   Б. А. Абдурахманов, Х. М. Илиев, С. А. Тачилин +2

   МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20107 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.144432

3. Silicon solar cells with Si-Ge microheterojunctions

   Б. А. Абдурахманов, Х. М. Илиев, С. А. Тачилин +1

   МақолаSilicon and Solar Cell TechnologiesRussian Microelectronics20121 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.392893