Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Spectral and current-voltage characteristics of Si-Si1−xGex heterostructures grown by liquid phase epitaxy

1. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

   Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

   МақолаSemiconductor materials and interfacesSemiconductors20228 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.000429

2. Photovoltaic Cells Based on Silicon with Binary Compounds GexSi1–x

   Н. Ф. Зикриллаев, Kh. F. Zikrillaev, F. E. Urakova +4

   МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.005819