Ушбу ишга иқтибос қилган ишлар

1 та иш

Иш: Study of certain properties of Si-Si1−xGex (0 ≤ x ≤ 1) structures grown from a restricted tin-based solution-melt by liquid-phase epitaxy

1. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

   А. С. Саидов, A. Sh. Razzokov

   МақолаSemiconductor materials and interfacesCrystallography Reports20225 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.000489